Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-04-17
2007-04-17
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
Reexamination Certificate
active
10712464
ABSTRACT:
A method of operating a substrate processing chamber comprising transferring a first substrate into the substrate processing chamber and heating the substrate to a first temperature of at least 510° C.; depositing an insulating layer over the first substrate while reducing the temperature of the substrate from the first temperature to a second temperature that is lower than the first temperature; transferring the first substrate out of the substrate processing chamber; removing unwanted deposition material formed on interior surfaces of the chamber during the depositing step by introducing reactive halogen species into the chamber while increasing the temperature of chamber; transferring a second substrate into the substrate processing chamber and heating the substrate to the first temperature; and depositing an insulating layer over the second substrate while reducing the temperature of the substrate from the first temperature to the second temperature.
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Sorab K. Ghandhi, “VLSI Fabrication Principles, Silicon and Gallium Arsenide”, John Wiley & Sons, 1986, pp 377-383.
Bang Won B.
Liu Theresa Marie O.
Mukai Kevin Mikio
Wang Yen-Kun
Applied Materials
Coleman W. David
Townsend & Townsend & Crew LLP
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