Raised source and drain process with disposable spacers

Details Raised source and drain process with disposable spacers Raised source and drain process with disposable spacers

2005-06-08

2010-06-29

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S303000

Reexamination Certificate

active

07745296

ABSTRACT:
A method for forming raised source and drain regions in a semiconductor manufacturing process employs double disposable spacers. A deposited oxide is provided between the first and second disposable spacers, and serves to protect the gate electrode, first disposable spacers and a cap layer during the dry etching of the larger, second disposable spacers. Mouse ears are thereby prevented, while the use of a second disposable spacer avoids shadow-effects during halo ion-implants.

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Translation of Official Communication, Issued May 21, 2008, Appln. No. 11 2006 001 520.6 (2 pages).

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