Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-31
1999-11-02
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257329, H01L 2976, H01L 2994, H01L 31062
Patent
active
059775882
ABSTRACT:
A power MOSFET suitable for use in RF applications and a method for making the same is disclosed. The power MOSFET has an increased distance between gate and drain regions of the device in order to decrease the device gate to drain capacitance C.sub.gd. The distance between the gate and drain regions is increased by selective doping of a polysilicon layer of the gate to produce at least two polysilicon gate regions separated by a region of undoped polysilicon that is positioned over a substantial portion of the drain region that resides between the channel portions of the body region of the device. The addition of a contact oxide layer formed directly above the region of undoped polysilicon further increases the distance between gate and drain. Finally, a metal layer is deposited over the entire structure to form the gate and source electrodes of the device.
REFERENCES:
patent: 4455565 (1984-06-01), Goodman et al.
Fenty Jesse A.
Galanthay Theodore E.
Jorgenson Lisa K.
Larson Renee M.
Martin-Wallace Valencia
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