Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-03-15
2005-03-15
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S712000, C257S675000, C257S778000
Reexamination Certificate
active
06867492
ABSTRACT:
A radio-frequency power component and a radio-frequency power module, as well as to methods for producing them are encompassed. The radio-frequency power component has a semiconductor chip that is suitable for flip chip mounting. The semiconductor chip has an active upper face that produces power losses. This active upper face is covered by an electrically isolating layer leaving free contact surfaces, with a heat-dissipating metal layer being applied to its upper face. The metal layer directly dissipates the heat losses from the active semiconductor structures.
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Auburger Albert
Klose Frank
Lehner Rudolf
Theuss Horst
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Nguyen Dilinh
Pham Long
LandOfFree
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