Radio-frequency power component, radio-frequency power...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Reexamination Certificate

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Details

C257S712000, C257S675000, C257S778000

Reexamination Certificate

active

06867492

ABSTRACT:
A radio-frequency power component and a radio-frequency power module, as well as to methods for producing them are encompassed. The radio-frequency power component has a semiconductor chip that is suitable for flip chip mounting. The semiconductor chip has an active upper face that produces power losses. This active upper face is covered by an electrically isolating layer leaving free contact surfaces, with a heat-dissipating metal layer being applied to its upper face. The metal layer directly dissipates the heat losses from the active semiconductor structures.

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patent: 2000223629 (2000-08-01), None

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