Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1984-05-14
1985-11-12
Kittle, John E.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430270, 430313, 156643, G03C 516, G03C 172
Patent
active
045528330
ABSTRACT:
A negative tone resist image is achieved by (1) coating a substrate with a film of a polymer containing a masked, reactive functionality; (2) imagewise exposing the film to radiation in a fashion such that the masked functionality is liberated; (3) contacting the film with an organometallic reagent; (4) developing the relief image by the oxygen plasma etching.
REFERENCES:
patent: 4307177 (1981-12-01), Crivello
patent: 4307178 (1981-12-01), Kaplan et al.
patent: 4389482 (1983-06-01), Bargon et al.
patent: 4396704 (1983-08-01), Taylor
patent: 4464455 (1984-08-01), Yoneda et al.
patent: 4481049 (1984-11-01), Reichmanis et al.
patent: 4481279 (1984-11-01), Naito et al.
patent: 4517276 (1985-05-01), Lewis
Gessner G. Hawley, The Condensed Chemical Dictionary, Tenth Edition, Van Nostrand Reinhold Company, New York, N.Y. 1981, pp. 920-921.
Julius Grant, Ed., Hackh's Chemical Dictionary, 4th Ed., McGraw-Hill Book Company, 1969, pp. 611, 476; 1944, p. 801.
W. S. DeForest, Photoresist Materials and Processes, McGraw-Hill, Inc., New York, N.Y., 1975, pp. 48-58.
F. G. A. Stone et al., Eds., Advances in Organometallic Chemistry, vol. 13, Academic Press, New York, N.Y., 1975, pp. 7, 32-33.
Henry Gilman et al., Eds., Organic Chemistry: An Advanced Treatise, Second Ed., vol. 1, John Wiley & Sons, Inc., New York, New York, 1943, p. 491.
Ito Hiroshi
MacDonald Scott A.
Miller Robert D.
Willson Carlton G.
Hamilton Cynthia
International Business Machines - Corporation
Kittle John E.
Walsh Joseph G.
LandOfFree
Radiation sensitive and oxygen plasma developable resist does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation sensitive and oxygen plasma developable resist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation sensitive and oxygen plasma developable resist will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1880023