Radiation lithography mask and method of manufacturing same

Details Radiation lithography mask and method of manufacturing same Radiation lithography mask and method of manufacturing same

1982-04-29

1984-08-28

Anderson, Bruce C.

X-ray or gamma ray systems or devices

Specific application

Lithography

430 5, B01J 1700

Patent

active

044687990

ABSTRACT:
The manufacture of semiconductor systems by means of radiation lithography requires low-stress masks when it is important to achieve very fine structures. In accordance with the invention, such a mask comprises a carrier of boron-doped silicon, a radiation absorbing pattern consisting of a double layer of different metals, such as molybdenum and tungsten, or a double layer of layers of the same metal, such as molybdenum, which are deposited in a different manner.

REFERENCES:
patent: 3742230 (1973-06-01), Spears et al.
patent: 4035522 (1977-07-01), Hatzakis
patent: 4037111 (1977-07-01), Coquin et al.
patent: 4171489 (1979-10-01), Adams et al.
patent: 4218503 (1980-08-01), Reekstin et al.
patent: 4253029 (1981-02-01), Lepselter et al.
patent: 4283632 (1981-08-01), Nakagawa et al.
patent: 4329410 (1982-05-01), Buckley

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