Radiation hardened semiconductor memory

Details Radiation hardened semiconductor memory Radiation hardened semiconductor memory

1999-09-10

2000-07-18

Le, Vu A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365 53, 257368, 257499, 257508, G11C 1100

Patent

active

060916303

ABSTRACT:
A radiation hardened memory device having static random access memory cells includes active gate isolation structures placed in series with oxide isolation regions between the active regions of a memory cell array. The active gate isolation structure includes a gate oxide and polycrystalline silicon gate layer electrically coupled to a supply terminal resulting in an active gate isolation structure that prevents a conductive channel extending from adjacent active regions from forming. The gate oxide of the active gate isolation structures is relatively thin compared to the conventional oxide isolation regions and thus, will be less susceptible to any adverse influence from trapped charges caused by radiation exposure.

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