Radiation-hard, low power, sub-micron CMOS on a SOI substrate

Details Radiation-hard, low power, sub-micron CMOS on a SOI substrate Radiation-hard, low power, sub-micron CMOS on a SOI substrate

1996-06-04

1998-09-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438164, 438165, 438163, 438526, 438953, H01L 2184

Patent

active

058077715

ABSTRACT:
A radiation-hard, low-power semiconductor device of the complementary metal-oxide semiconductor (CMOS) type which is fabricated with a sub-micron feature size on a silicon-on-insulator (SOI) substrate (12). The SOI substrate may be of several different types. The sub-micron CMOS SOI device has both a fabrication and structural complexity favorably comparable to conventional CMOS devices which are not radiation-hard. A method for fabricating the device is disclosed.

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S. Wolf, "Silicon Processing for the VLSI Era" vol. II, pp. 144-146, 354-359, Jun. 1990.

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