Self-aligned wordline keeper and method of manufacture therefor

Details Self-aligned wordline keeper and method of manufacture therefor Self-aligned wordline keeper and method of manufacture therefor

1997-12-18

1999-09-21

Phan, Trong

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365173, G11C 1100, G11C 1114, G11C 1115

Patent

active

059562676

ABSTRACT:
A word line structure, and method of manufacture therefor, for a monolithically formed magnetoresistive memory device having a magnetic field sensitive bit region. In a preferred embodiment, the word line structure includes a dielectric layer having an etched cavity formed therein, wherein the cavity has a bottom surface and two spaced side surfaces. A magnetic field keeper is provided adjacent to the back and/or side surfaces of the cavity. A conductive word line is also provided in the cavity and adjacent to the magnetic field keeper to at least substantially fill the cavity. A polishing step may be used to remove any portion of the magnetic field keeper and/or conductive word line that lie above the top surface of the dielectric layer to provide a planer top surface.

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