Radiation hard gated feedback memory cell

Static information storage and retrieval – Systems using particular element – Flip-flop

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365190, 307279, G11C 1140

Patent

active

047824670

ABSTRACT:
Pairs of cross coupled transistors are configured as a bistable regenerative circuit. Isolation means, such as diodes or transistors, are provided in the cross coupling paths to ensure that if the logic state of one transistor is temporarily changed by radiation striking the circuit, the logic state of the other transistor it is paired with will not change and the logic state of the unchanged transistor will be utilized to maintain the logic state of the other pair of transistors. CML, DTL and SDFL circuits are disclosed as the preferred embodiments.

REFERENCES:
patent: 2909678 (1959-10-01), Jensen
patent: 3178584 (1965-04-01), Clark
patent: 3621303 (1969-11-01), Jonjallaz
patent: 3678300 (1972-07-01), Keller
patent: 3912950 (1975-10-01), Tada
patent: 3973246 (1976-08-01), Millhollan et al.
patent: 4128773 (1978-12-01), Troutman et al.
patent: 4130892 (1978-12-01), Gunckel, II et al.
patent: 4270062 (1981-05-01), Hanna
patent: 4322820 (1982-03-01), Toyoda
patent: 4400712 (1983-08-01), O'Connor

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