Radiation correction method for electron beam lithography

Details Radiation correction method for electron beam lithography Radiation correction method for electron beam lithography

2005-03-29

2005-03-29

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

C430S394000, C430S942000

Reexamination Certificate

active

06872507

ABSTRACT:
A method for forming a patterned microelectronics layer employing electron beam lithography in a sensitive material upon a substrate with optimal correction for proximity effects resulting from electron back scattering into the resist material. There is provided a substrate having formed thereon a layer of resist material sensitive to electron beam exposure. There is then exposed the sensitive layer to a vector scan shaped electron beam to write a primary pattern with dose correction of the beam dose for proximity effects due to electron scattering at each point in the primary pattern. There is then written a secondary pattern which is a negative reversed image of the primary pattern in a secondary exposure employing a vector scan shaped focused electron beam at an exposure dose substantially below the primary beam dose, there being provided a gap between the primary pattern and the secondary pattern. There is then developed the primary pattern in the sensitive resist layer to form the final corrected pattern on the substrate. The patterned layer of resist material may be employed directly on the substrate on which it is formed, or alternatively the patterned resist layer may be employed formed over an opaque layer upon the transparent substrate and subsequently the pattern etched into the opaque layer to form a photomask.

REFERENCES:
patent: 4463265 (1984-07-01), Owen et al.
patent: 5451487 (1995-09-01), Abe et al.
patent: 5510214 (1996-04-01), Pan et al.
patent: 5582938 (1996-12-01), Ham
patent: 5847959 (1998-12-01), Veneklasen et al.
patent: 5885748 (1999-03-01), Ohnuma
patent: 6194103 (2001-02-01), Tzu et al.

Affiliated with

Also associated with

Rating

Radiation correction method for electron beam lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radiation correction method for electron beam lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation correction method for electron beam lithography will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3404166