Quasi self-aligned source/drain FinFET process

Details Quasi self-aligned source/drain FinFET process Quasi self-aligned source/drain FinFET process

2007-12-18

2007-12-18

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S164000, C438S176000, C438S283000

Reexamination Certificate

active

11164215

ABSTRACT:
A method of forming a semiconductor structure including a plurality of finFFET devices in which crossing masks are employed in providing a rectangular patterns to define relatively thin Fins along with a chemical oxide removal (COR) process is provided. The present method further includes a step of merging adjacent Fins by the use of a selective silicon-containing material. The present invention also relates to the resultant semiconductor structure that is formed utilizing the method of the present invention.

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