Quantum well field-effect transistors with composite spacer...

Details Quantum well field-effect transistors with composite spacer... Quantum well field-effect transistors with composite spacer...

2011-01-11

2011-01-11

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE21403, C438S172000

Reexamination Certificate

active

07868318

ABSTRACT:
A quantum well (QW) layer is provided in a semiconductive device. The QW layer is covered with a composite spacer above QW layer. The composite spacer includes an InP spacer first layer and an InAlAs spacer second layer above and on the InP spacer first layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and above the QW layer. The semiconductive device also includes a high-k gate dielectric layer that sits on the InP spacer first layer in a gate recess. A process of forming the QW layer includes using an off-cut semiconductive substrate.

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Selmic et al. (“Design and characterization of 1.3-micron Alln-GaAs-InP multiple-quantum-well lasers,” IEEE J. Sel. Topics Quantum Electron., vol. 7, No. 2, pp. 340-349, Mar.-Apr. 2001).

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