Thin film transistor and manufacturing method of the same

Details Thin film transistor and manufacturing method of the same Thin film transistor and manufacturing method of the same

2011-04-26

2011-04-26

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21101

Reexamination Certificate

active

07932137

ABSTRACT:
To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon.

REFERENCES:
patent: 5605847 (1997-02-01), Zhang
patent: 6875674 (2005-04-01), Asami et al.
patent: 7202115 (2007-04-01), Hirano et al.
patent: 2005/0156239 (2005-07-01), Seko et al.
patent: 2008/0296580 (2008-12-01), Mori et al.
patent: 09-213964 (1997-08-01), None
patent: 2004-302475 (2004-10-01), None

Affiliated with

Also associated with

Rating

Thin film transistor and manufacturing method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor and manufacturing method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and manufacturing method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2737725