Quantum structure and forming method of the same

Details Quantum structure and forming method of the same Quantum structure and forming method of the same

2006-04-04

2006-04-04

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S316000, C438S201000, C438S264000

Reexamination Certificate

active

07022571

ABSTRACT:
A quantum structure and the forming method based on the difference in characteristic of two matters is provided. The forming method includes several steps. At first, providing a first dielectric layer for forming a second dielectric layer thereon. The second dielectric layer has major elements and impurities contained. Treating the second dielectric layer to drive the impurities to form the quantum structure. For example, oxidizing the major elements to drive the impurities in the first dielectric layer to form the quantum structure in said first dielectric layer because the oxidizing capability of the major elements is stronger than that of the impurities.

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