Quantum effect device, method of manufacturing the same

Details Quantum effect device, method of manufacturing the same Quantum effect device, method of manufacturing the same

1998-03-09

1999-10-26

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438703, 257 14, 257 17, H01L 2170

Patent

active

059727446

ABSTRACT:
A silicon island portion is formed in a quantum wire so as to be sandwiched between a pair of tunnel barrier portions of a silicon oxide film. On one side of the silicon island portion, a gate electrode for potential control is disposed with a gate insulating film of a silicon oxide film interposed therebetween. On the other side of the silicon island portion, a control electrode for potential control is disposed with an insulating film of a silicon oxide film interposed therebetween. Each of the tunnel barrier portions has a quantum wire constriction structure, which is formed by oxidizing a quantum wire, i.e., a silicon oxide film formed as a field enhanced oxide film with an atomic force microscope or the like, from its surface to a substantially center portion in its section.

REFERENCES:
patent: 5347140 (1994-09-01), Hirai et al.
patent: 5618760 (1997-04-01), Soh et al.

Affiliated with

Also associated with

Rating

Quantum effect device, method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Quantum effect device, method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum effect device, method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-763392