Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-03-09
1999-10-26
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438703, 257 14, 257 17, H01L 2170
Patent
active
059727446
ABSTRACT:
A silicon island portion is formed in a quantum wire so as to be sandwiched between a pair of tunnel barrier portions of a silicon oxide film. On one side of the silicon island portion, a gate electrode for potential control is disposed with a gate insulating film of a silicon oxide film interposed therebetween. On the other side of the silicon island portion, a control electrode for potential control is disposed with an insulating film of a silicon oxide film interposed therebetween. Each of the tunnel barrier portions has a quantum wire constriction structure, which is formed by oxidizing a quantum wire, i.e., a silicon oxide film formed as a field enhanced oxide film with an atomic force microscope or the like, from its surface to a substantially center portion in its section.
REFERENCES:
patent: 5347140 (1994-09-01), Hirai et al.
patent: 5618760 (1997-04-01), Soh et al.
Araki Kiyoshi
Hirai Yoshihiko
Morimoto Kiyoshi
Morita Kiyoyuki
Yuki Koichiro
Matsushita Electric - Industrial Co., Ltd.
Monin, Jr. Donald L.
Wille Douglas A.
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