Quantum dot array and production method therefor, and dot...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

Reexamination Certificate

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C438S962000, C257S013000, C257SE29071, C977S774000

Reexamination Certificate

active

07737046

ABSTRACT:
The present invention is a method of manufacturing a quantum dot array having a plurality of columnar parts including a quantum dot on a substrate, the method comprising the steps of obliquely vapor-depositing a material constituting a first barrier layer to become an energy barrier against the quantum dot onto a surface of the substrate, so as to form a plurality of first barrier layers; obliquely vapor-depositing a material constituting the quantum dot with respect to the surface of the substrate, so as to form the quantum dots on the first barrier layers; and obliquely vapor-depositing a material constituting a second barrier layer to become an energy barrier against the quantum dot with respect to the surface of the substrate, so as to form the second barrier layers on the quantum dots.

REFERENCES:
patent: 5932354 (1999-08-01), Takeda et al.
patent: 2005/0092980 (2005-05-01), Chen et al.
patent: 5-90612 (1993-04-01), None
patent: 2004-193525 (2004-07-01), None
patent: WO 2004/055872 (2004-07-01), None
D-X Ye et al., “Growth of uniformly aligned nanorod arrays by oblique angle deposition with two-phase substrate rotation”, Nanotechnology 15 (2004), pp. 817-821.
M. Suzuki et al., “Morphological Stability of TiO2Thin Films with Isolated Columns,” Japanese Journal of Applied Physics, vol. 40, Part 2, No. 4B, pp. L398-L400 (Apr. 15, 2001).
M. Suzuki et al., “Numerical Study of the Effective Surface Area of Obliquely Deposited Thin Films,” Journal of Applied Physics, vol. 90, No. 11, pp. 5599-5605 (Dec. 1, 2001).

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