Quantum box or quantum wire semiconductor structure and methods

Details Quantum box or quantum wire semiconductor structure and methods Quantum box or quantum wire semiconductor structure and methods

1992-06-15

1994-05-17

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 50, 437129, H01S 319

Patent

active

053134842

ABSTRACT:
A quantum box semiconductor structure in which truncated triangular, or quadrilateral, pyramid base portions are formed on the main surface of a silicon semiconductor substrate defined, selectively, by a (111) B or a (100) plane; the triangular, or quadrilateral, truncated pyramid base portions have corresponding three, or four, (111) A plane sides, respectively. Corresponding triangular, or quadrilateral, quantum boxes of a second semiconductor material having a narrower energy band gap and larger electron affinity than the first, silicon semiconductor material of the base portions are formed on the corresponding triangular, or quadrilateral, top surfaces of the base portions and each has three, or four, corresponding (111) A plane sides. The quantum box lasers are formed in a succession of process steps including epitaxial growth or, alternatively, alternate epitaxial growth and etching steps. An alternative structure includes stripe-like quantum boxes of triangular cross-section. Further, the quantum boxes may be truncated and further triangular, or quadrilateral, prisms may be formed on the corresponding top surfaces of the respective boxes. A further embodiment employs truncated base portions of triangular prism cross-section and quantum wires of triangular cross-section formed thereon. Covering, clad and electrode interconnection layers are formed on the resulting structures and the main surface of the substrate, with respective electrodes being formed on the electrode interconnection layer and the bottom main surface of the substrate.

REFERENCES:
patent: 5070510 (1991-12-01), Konushi et al.
T. Fukui et al., "GaAs Tetrahedral Quantum Dots: Towards a Zero-Dimensional Electron-Hole System", Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 99-102.
Masahiro Asada, "Regarding Possibility of Quantum Box Semiconductor Laser," Investigation on Electronic Study World (1988), pp. 69-78 (Asaki Shupan-sha).
Japanese Patent Application No. 3-159287 dated Jul. 9, 1991 with English language Abstract.

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