Quad SRAM based one time programmable memory

Details Quad SRAM based one time programmable memory Quad SRAM based one time programmable memory

2007-10-31

2009-10-27

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S189050, C365S189110

Reexamination Certificate

active

07609578

ABSTRACT:
A quad SRAM based one time programmable memory cell is provided. Prior to programming, the memory cell operates as an SRAM memory cell. After programming, the memory cell operates as a one-time programmable non-volatile memory cell. The memory cell includes a storage element coupled at a first side to a first upper fuse and a first lower fuse and coupled at a second side to a second upper fuse and a second lower fuse. When the first upper fuse and second lower fuse are programmed, the storage element outputs a first value. When the second upper fuse and first lower fuse are programmed, the storage element outputs a second value. After programming the upper fuse acts as a pull-up fuse and the lower fuse acts as a pull-down fuse hold the state of the cell.

REFERENCES:
patent: 4995004 (1991-02-01), Lee
patent: 5777608 (1998-07-01), Lipovski et al.
patent: 6882583 (2005-04-01), Gorman et al.
patent: 7285982 (2007-10-01), Madurawe

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