Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal
Reexamination Certificate
2005-01-06
2009-12-15
Nelms, David (Department: 2871)
Liquid crystal cells, elements and systems
Particular excitation of liquid crystal
Electrical excitation of liquid crystal
C349S041000, C349S042000, C349S046000, C439S149000
Reexamination Certificate
active
07633571
ABSTRACT:
Recognizing the phenomenon that the film thickness of a semiconductor layer causes shift in the OFF-leak current characteristic that corresponds to back-gate voltage of a thin-film transistor, the average film thickness of a semiconductor layer is prescribed such that the shift of the OFF-leak current characteristic is reduced. Alternatively, the film thickness distribution (the ratio of the occurrence of each region having different film thickness) in the direction of the channel width of the semiconductor layer is prescribed.
REFERENCES:
patent: 6462723 (2002-10-01), Yamazaki et al.
patent: 6771346 (2004-08-01), Sugimoto et al.
patent: 6803982 (2004-10-01), Komatsu
patent: 2003/0107077 (2003-06-01), Yamazaki et al.
patent: 2007/0020888 (2007-01-01), Yamazaki et al.
patent: H10-111520 (1998-04-01), None
patent: 2001-222001 (2001-08-01), None
patent: 2002-190606 (2002-07-01), None
patent: 2002-313810 (2002-10-01), None
patent: 2003-229578 JP (2003-08-01), None
patent: 2003-270663 (2003-09-01), None
patent: 2004-012726 (2004-01-01), None
Korenari Takahiro
Seko Nobuya
Tanabe Hiroshi
Briggs Nathanael R.
NEC Corporation
Nelms David
Sughrue & Mion, PLLC
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