Pyrogenic wet thermal oxidation of semiconductor wafers

Details Pyrogenic wet thermal oxidation of semiconductor wafers Pyrogenic wet thermal oxidation of semiconductor wafers

1994-07-22

1997-05-27

Kunemund, Robert

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

H01L 21316

Patent

active

056332122

ABSTRACT:
An oxidizing gas containing water vapor generated by hydrogen combustion is introduced from an external gas burner via gas supply pipes into the upper space of a process tube surrounded by a heater, and exhausted from the lower part of the process tube. Until the flame of hydrogen burnt in the external gas burner becomes stable, a dilute gas such as N.sub.2 is introduced into the upper space of the process tube via other gas supply pipes so as to suppress the initial oxidation. Suppressing the initial oxidation may also be performed by bypassing an oxidizing gas from the external gas burner to an exhaust system while introducing a non-oxidizing gas such as N.sub.2 into the upper space of the process tube.

REFERENCES:
patent: 4154192 (1979-05-01), Tsubouchi et al.
patent: 4217154 (1980-08-01), Popp et al.
patent: 4376796 (1983-03-01), Arrasmith
patent: 4599247 (1986-07-01), Bean et al.
patent: 4906595 (1990-03-01), Van Der Plas et al.
patent: 4911638 (1990-03-01), Bayne et al.
patent: 5154949 (1992-10-01), Shindo et al.
patent: 5234501 (1993-08-01), Nakao et al.
patent: 5257926 (1993-11-01), Drimer et al.
patent: 5359148 (1994-10-01), Okase et al.
patent: 5388944 (1995-02-01), Takanabe et al.

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