Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-02
2006-05-02
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S683000, C438S688000
Reexamination Certificate
active
07037830
ABSTRACT:
A physical vapor deposition sputtering process for enhancing the <0002> preferred orientation of a titanium layer uses hydrogen before or during the deposition process. Using the oriented titanium layer as a base layer for a titanium, titanium nitride, aluminum interconnect stack results in formation of an aluminum layer with predominant <111> crystallographic orientation which provides enhanced resistance to electromigration. In one process, a mixture of an inert gas, usually argon, and hydrogen is used as the sputtering gas for PVD deposition of titanium in place of pure argon. Alternatively, titanium is deposited in a two-step process in which an initial burst of hydrogen is introduced into the reaction chamber in a separate, first step. Pure argon is used as the sputtering gas for the titanium deposition in a second step. The method is broadly applicable to the deposition of metallization layers.
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Danek Michal
Dorsh Tom
Griswold Jack
Healey Paul D.
Ng Michael Kwok Leung
Novellus Systems Inc.
Perkins Pamela E
Silicon Valley Patent & Group LLP
Smith Zandra V.
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