Pulsed write techniques for magneto-resistive memories

Details Pulsed write techniques for magneto-resistive memories Pulsed write techniques for magneto-resistive memories

2005-02-01

2005-02-01

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S189080, C365S190000

Reexamination Certificate

active

06850431

ABSTRACT:
A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.

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