Pulsed ultra-high aspect ratio dielectric etch

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S710000, C438S723000, C438S724000, C438S725000, C216S067000, C216S068000, C216S072000, C216S074000, C216S081000

Reexamination Certificate

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07547636

ABSTRACT:
A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.

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