Pulsed ultra-high aspect ratio dielectric etch

Details Pulsed ultra-high aspect ratio dielectric etch Pulsed ultra-high aspect ratio dielectric etch

2007-02-05

2009-06-16

Norton, Nadine (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S723000, C438S724000, C438S725000, C216S067000, C216S068000, C216S072000, C216S074000, C216S081000

Reexamination Certificate

active

07547636

ABSTRACT:
A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.

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