Pulsed-plasma system for etching semiconductor structures

Details Pulsed-plasma system for etching semiconductor structures Pulsed-plasma system for etching semiconductor structures

2007-02-22

2010-06-15

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S712000, C216S063000

Reexamination Certificate

active

07737042

ABSTRACT:
A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

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