Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-05-15
2000-02-01
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20419215, C23C 1432
Patent
active
060198761
ABSTRACT:
A method and apparatus for depositing an underlayer and/or a magnetic thin film layer on a data storage disk are described. The sputtering power is supplied in the form of pulses during the application of the underlayer and/or magnetic storage to periodically ignite the plasma and increase the charge-carrier density in the sputtering chamber. The repetition frequency and parameters for the pulses and pauses between pulses are adjusted to achieve a desired nominal value for the coercive field strength of the magnetic layer. Preferably the repetition frequency of the power switching is from 10 to 80 kHz and the ratio of pulse length to pulse pause is within 5:1 to 1:5.
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Goedicke Klaus
Junghahnel Michael
Lang Artur
Meyer Dieter
Muller Manfred
Cantelmo Gregg
International Business Machines - Corporation
Knight G. Marlin
Nguyen Nam
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