Pull up circuit for digit lines in a semiconductor memory

Details Pull up circuit for digit lines in a semiconductor memory Pull up circuit for digit lines in a semiconductor memory

1988-09-30

1990-05-08

Gossage, Glenn A.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36518906, 365203, 365205, 307540, G11C 700, H03K 508

Patent

active

049244426

ABSTRACT:
A voltage sensing circuit is used to rapidly pull up a high potential node of a reference array to a value of a high potential source reduced by a threshold voltage (V.sub.CC -V.sub.T). During an enable cycle, the high potential node is precharged to a potential of V.sub.CC -V.sub.T, which turns on a transistor gated to the V.sub.CC potential. This pulls the high potential node as rapidly as possible to a high level in order to speed up the sensing process. A potential maintenance circuit provides sufficient current from the high potential source to maintain a desired potential at the high potential node.

REFERENCES:
patent: 4417328 (1983-11-01), Ochii
patent: 4578778 (1986-03-01), Aoyama
patent: 4679172 (1987-07-01), Kirsch et al.

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