PSZT for integrated circuit applications

Details PSZT for integrated circuit applications PSZT for integrated circuit applications

1996-06-28

1998-09-22

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257298, 257300, H01L 27108

Patent

active

058118470

ABSTRACT:
An integrated circuit memory, MMIC, or other device including a dielectric comprising lead-tin zirconium-titanium oxide (PSZT). The proportion of tin ranges from 30% to 50% of the total amount of tin, zirconium and titanium. The dielectric is formed by applying a first liquid precursor having 10% excess lead to a substrate and heating it to form a first PSZT thin film, applying a second liquid precursor having 5% excess lead to the first thin film and heating to form a second thin film, then applying the first liquid precursor and heating to form a third thin film, and annealing the three thin films together to form a PSZT dielectric layer.

REFERENCES:
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patent: 4946710 (1990-08-01), Miller et al.
patent: 5112433 (1992-05-01), Dawson et al.
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patent: 5471721 (1995-12-01), Haertling
patent: 5644184 (1997-07-01), Kucherov
Melnick, et al.; "Process Optimization and Characterization of Device Worthy Sol-Gel Based PZT for Ferroelectric Memories;" Ferroelectrics, 1990; vol. 109.
Moulson, et al.; Electroceramics-Materials-properties-applications; 1990; "6.3 General Characteristics and Fabrication of PZT"; pp. 276-284.

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