Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-01-06
1999-08-10
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438231, 438525, 438556, 438563, H01L 218238
Patent
active
059372893
ABSTRACT:
Dual work function doping is provided by doping a selected number of gate structures having self-aligned insulating layer on top of the structures through at least one side wall of the gate structures with a first conductivity type to thereby provide an array of gate structures whereby some are doped with the first conductivity type and others of the gate structures are doped with a second and different conductivity type. Also provided is an array of gate structures whereby the individual gate structures contain self-aligned insulating layer on their top portion and wherein some of the gate structures are doped with a first conductivity type and other of the gate structures are doped with a second and different conductivity type.
REFERENCES:
patent: 4201603 (1980-05-01), Scott et al.
patent: 4599789 (1986-07-01), Gasner
patent: 5028564 (1991-07-01), Chang et al.
patent: 5308780 (1994-05-01), Bhou et al.
patent: 5355006 (1994-10-01), Iguchi
patent: 5360751 (1994-11-01), Lee
patent: 5378641 (1995-01-01), Cheffengs
patent: 5500379 (1996-03-01), Odake et al.
patent: 5576579 (1996-11-01), Agnello et al.
patent: 5614432 (1997-03-01), Goto
patent: 5770490 (1998-06-01), Frenete et al.
Bronner Gary Bela
Gambino Jeffrey P.
Mandelman Jack A.
Radens Carl J.
Tonti William Robert
Capella Steven
International Business Machines - Corporation
Trinh Michael
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