Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-11-29
2005-11-29
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000
Reexamination Certificate
active
06970375
ABSTRACT:
Providing a reference voltage to a cross point memory array. The invention is a cross point memory array and some peripheral circuitry that, when activated, provides a reference voltage to a cross point array in order to prevent unselected conductive array lines from floating to an undesired voltage. The peripheral circuitry can be activated before, after or during selection of a specific memory plug. If the peripheral circuitry is activated during selection, only the unselected conductive array lines should be brought to the reference voltage. Otherwise, all the conductive array lines can be brought to the reference voltage.
REFERENCES:
patent: 5496759 (1996-03-01), Yue et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5792569 (1998-08-01), Sun et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5838608 (1998-11-01), Zhu et al.
patent: 5920500 (1999-07-01), Tehrani et al.
patent: 5946227 (1999-08-01), Naji
patent: 6055178 (2000-04-01), Naji
patent: 6111781 (2000-08-01), Naji
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6178131 (2001-01-01), Ishikawa et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6226160 (2001-05-01), Gallagher et al.
patent: 6236590 (2001-05-01), Bhattacharyya et al.
patent: 6242770 (2001-06-01), Bronner et al.
patent: 6256223 (2001-07-01), Sun
patent: 6331943 (2001-12-01), Naji et al.
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6531371 (2003-03-01), Hsu et al.
patent: 6532163 (2003-03-01), Okazawa
patent: 6534326 (2003-03-01), Hsu et al.
patent: 2001/0023992 (2001-09-01), Doll
patent: 2001/0048608 (2001-12-01), Numata et al.
patent: 2002/0000597 (2002-01-01), Okazawa
patent: 2002/0001224 (2002-01-01), Poechmueller
patent: 2003/0001178 (2003-01-01), Hsu et al.
patent: 2003/0003675 (2003-01-01), Hsu
Asamitsu, A. et al., “Current switching of resistive states in magnetoresistive manganites”, Nature, vol. 388, Jul. 3, 1997, 50-52.
Beck, A. et al., “Reproducible switching effect in thin oxide films for memory applications”, Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000, 139-141.
Guo-Qiang Gong, “Colossal magnetoresistance of 1 000 000-fold magnitude achieved in the antiferromagnetic phase of La1-xCaxMnO3”, Applied Physics Letters, vol. 67, No. 12, Sep. 18, 1995, 1783-1785.
Khartsev, S.I. et al., “Colossal magnetoresistance in ultrathin epitaxial La1-xCaxMnO3Films”, Journal of Applied Physics, vol. 87, No. 5, Mar. 1, 2000, 2394-2399.
Liu, S.Q., et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, 2749-2651.
Liu, S.Q. et al., “A New Concept For Non-Volatile Memory: Electric-Pulse Induced Reversible Resistance Change Effect In Magnetoresistive Films”, Space Vacuum Epitaxy Center, University of Huston, Huston, TX, 7 pages.
Rossel, C. et al., “Electrical current distribution across a metal-insulator-metal structure during bistable switching”, Journal of Applied Physics, vol. 90, No. 6. Sep. 15, 2001, 2892-2898.
Watanabe, Y. et al., “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3single crystals”, Applied Physics Letters, vol. 78, No. 23, Jun. 4. 2001, 3738-3740.
Zhao, Y.G. et al., “Effect of oxygen content on the structural, transport and magnetic properties of La1-δMn1-δO thin films”, Journal of Applied Physics, vol. 86, No. 11, Dec. 1, 1999, 6327-6330.
Zhuang W.W. et al, “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory(RRAM)” IEEE 2002, 0-7803-7463-X, 4 pages.
Chevallier Christophe J.
Hsia Steve Kuo-Ren
Kinney Wayne
Longcor Steven W.
Rinerson Darrell
Auduong Gene N.
Malino Morgan
Unity Semiconductor Corporation
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