Providing a charge dissipation structure for an...

Details Providing a charge dissipation structure for an... Providing a charge dissipation structure for an...

2005-04-25

2009-02-10

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S052000

Reexamination Certificate

active

07488614

ABSTRACT:
In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electro-mechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.

REFERENCES:
patent: 4088799 (1978-05-01), Kurtin
patent: 5949944 (1999-09-01), Minford et al.
patent: 6214749 (2001-04-01), Watanabe et al.
patent: 2002/0139647 (2002-10-01), Bernstein
Wolf et al., Silicon processing for the VLSI ERA, vol. 1, pp. 285-286, Lattice Press, 1986.

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