Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-29
2006-08-29
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S954000
Reexamination Certificate
active
07098107
ABSTRACT:
A method for protecting a non-volatile memory device, the method including forming a non-volatile memory device including a polycide structure formed over a non-conducting charge trapping layer, and forming a protective layer over at least a portion of the polycide structure, the protective layer being adapted to absorb electromagnetic wave energy having a wavelength shorter than visible light. A device constructed in accordance with the method is also disclosed.
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Bloom Ilan
Ettan Boaz
Booth Richard A.
Eitan Law Group
Saifun Semiconductor Ltd.
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