Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-10
2006-10-10
Owens, Douglas W. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S954000, C438S257000, C438S258000, C438S259000, C438S260000, C438S262000, C438S263000, C438S264000, C438S265000, C438S266000
Reexamination Certificate
active
07118967
ABSTRACT:
A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell including a charge trapping dielectric charge storage layer in a semiconductor device; and during processing steps subsequent to formation of the charge trapping dielectric charge storage layer, protecting the charge trapping dielectric flash memory cell from exposure to a level of UV radiation sufficient to deposit a non-erasable charge in the charge trapping dielectric flash memory cell. In one embodiment, the step of protecting is carried out by selecting processes in BEOL fabrication which do not include use, generation or exposure of the semiconductor device to a level of UV radiation sufficient to deposit the non-erasable charge.
REFERENCES:
patent: 5519246 (1996-05-01), Shirota et al.
patent: 5714412 (1998-02-01), Liang et al.
patent: 5863462 (1999-01-01), Riedel et al.
patent: 5935705 (1999-08-01), Chen et al.
patent: 6090358 (2000-07-01), Chen et al.
patent: 6198216 (2001-03-01), Kosa et al.
patent: 6417053 (2002-07-01), Kuo
patent: 6444568 (2002-09-01), Sundararajan et al.
patent: 6656785 (2003-12-01), Chiang et al.
patent: 6709874 (2004-03-01), Ning
Liew; “Fabrication of SiCN Ceramic MEMS Using Injectable Polymer-Precursor Technique”; Sensors and Actuators A 89 (2001) 64-70.
Liew; “Fabrication of Multi-Layered SiCN Ceramic MEMS Using Photo-Polymerization of Precursor”; NSF Center for Advanced Manufacturing and Packaging of Microwave, Optical and Digital Electronics (CAMPmode), Department of Mechanical Engineering, University of Colorado.
Liew; “Fabrication of SiCN MEMS by Photopolymerization of Pre-Ceramic Polymer”; Sensors and Actuators A 95 (2002) 120-134.
Wei et al.; “Growth of SiCN Films by Magnetron Sputtering”; 2000 IoM Communications Ltd. Surface Engineering, 2000, 16, (2), 225-228.
Product Data Sheet; Ceraset™ Polyureasilazane; Product Sheet Issue Date: Jan. 19, 2001.
Caffall John
Cheng Ning
Erhardt Jeff P.
Ferguson Clarence B.
Gottipati Tyagamohan
Gebremariam Samuel
Owens Douglas W.
Renner , Otto, Boisselle & Sklar, LLP
Spansion LLC
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