Protection of aluminum metallization against chemical attack dur

Details Protection of aluminum metallization against chemical attack dur Protection of aluminum metallization against chemical attack dur

1996-10-15

1998-03-24

Niebling, John

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438714, 438958, H01L 21469

Patent

active

057312460

ABSTRACT:
A conductive layer in a semiconductor device is protected against chemical attack by a photoresist developer by forming a protective film overlying the conductive layer. The protective film is formed using a chemical reaction that occurs through defects in a passivation layer that was previously formed overlying the conductive layer. The chemical reaction substantially occurs at the surface of the conductive layer and chemically converts portions thereof in forming the protective film. Preferably, the conductive layer is aluminum or an alloy thereof containing copper and/or silicon, and the protective film is aluminum oxide formed on the aluminum layer to protect it from corrosion by tetramethyl ammonium hydroxide (TMAH). The passivation layer is TiN, and the chemical reaction used is oxidation of the aluminum layer through defects in the overlying TiN layer by placing in an ozone asher.

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