Protection device structure for low supply voltage applications

Details Protection device structure for low supply voltage applications Protection device structure for low supply voltage applications

1997-04-21

1998-08-04

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257362, H01L 2362

Patent

active

057897840

ABSTRACT:
A method for forming an ESD protection device, with reduced junction breakdown voltages, while simultaneously forming an integrated circuit, containing FET devices, has been developed. This invention features forming a large area, ESD protection diode, by using a first ion implantation step, of a specific conductivity type, also used for the heavily doped source and drain regions of attached FET devices. After photoresist processing, used to mask the attached FET devices, a second ion implantation step, opposite in conductivity type then the first implant, is used to complete the ESD protection diode, for the ESD protection device. This large area diode reduces junction breakdown voltage, while allowing ESD current to be discharged more efficiently then for smaller ESD protection counterparts.

REFERENCES:
patent: 3967295 (1976-06-01), Stewart
patent: 4617482 (1986-10-01), Matsuda
patent: 5060037 (1991-10-01), Rountree
patent: 5374565 (1994-12-01), Hsue et al.
patent: 5545909 (1996-08-01), Williams et al.

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