Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-12-15
1997-11-25
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257106, 257173, 257356, 257546, 257551, 257605, H01L 2976
Patent
active
056915543
ABSTRACT:
A protection circuit (13) for an integrated circuit (10) is capable of handling higher externally-provided voltages supplied to internal circuitry within the integrated circuit (10). The protection circuit (13) comprises a zener diode (20), wherein a N+ type diffusion region (38) is separated from a P field implant (40) lying between the N+ type diffusion region (38) and a P+ type diffusion region (39).
REFERENCES:
patent: 4922371 (1990-05-01), Gray et al.
Motorola Inc.
Wojciechowicz Edward
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