Integrated structure current sensing resistor for power devices

Details Integrated structure current sensing resistor for power devices Integrated structure current sensing resistor for power devices

1996-02-08

1997-11-25

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257334, 257337, H01L 2978

Patent

active

056915551

ABSTRACT:
In integrated structure sensing resistor for a power MOS device consists of a doped region extending from a deep body region of at least one cell of a first plurality of cells, constituting a main power device, to a deep body region of a corresponding cell of a second smaller plurality of cells constituting a current sensing device. The first plurality of cells and the second plurality of cells are formed using trench technology.

REFERENCES:
patent: 5034785 (1991-07-01), Blanchard
patent: 5410170 (1995-04-01), Bulucea et al.
Goodenough, "Trench-Gate DMOSFETs In SO-8 Switch 10 A At 30 V," Electronic Design: 65-72, 1995.

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