Protecting silicon germanium sidewall with silicon for...

Details Protecting silicon germanium sidewall with silicon for... Protecting silicon germanium sidewall with silicon for...

2007-04-10

2007-04-10

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S377000, C257SE21619, C257SE21622, C438S299000, C438S311000

Reexamination Certificate

active

10707840

ABSTRACT:
Raised Si/SiGe source and drain regions include epitaxially grown silicon on SiGe sidewalls. The epi silicon prevents adverse effects of Ge during silicidation, including Ge out diffusion and silicide line breakage. The Si also increases the active area.

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Subramanian S. Iyer, et

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