Programming optical device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE21527

Reexamination Certificate

active

11190992

ABSTRACT:
A semiconductor light emitting device and a method to form the same are disclosed. The device has at least one porous or low density dielectric region formed in or on top of a bottom electrode, at least one top electrode on the porous or low density dielectric region, and one or more color filters placed above the top electrode, wherein the porous or low density dielectric region contains light emitting nanocrystal materials.

REFERENCES:
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patent: 2004/0155317 (2004-08-01), Bhattacharyya
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Rebohle, L., et al., “Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers”, Appl. Phys. Lett., vol. 71, No. 19 (Nov. 10, 1997) pp. 2809-2811.
Shcheglov, K.V. et al., “Electroluminescence and photoluminescence of Ge-implanted Si/SiO2/Si structures”, Appl. Phys. Lett., vol. 66, No. 6 (Feb. 6, 1995) pp. 745-747.
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