Programming method of controlling the amount of write...

Details Programming method of controlling the amount of write... Programming method of controlling the amount of write...

2005-04-26

2005-04-26

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S230060, C365S189090, C365S225700, C365S163000, C365S096000, C365S100000

Reexamination Certificate

active

06885602

ABSTRACT:
A programming method which controls the amount of a write current applied to a Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the Phase-change Memory (PCM) in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing, or keeping the same a reset current and/or a set current.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3699543 (1972-10-01), Neale
patent: 3846767 (1974-11-01), Cohen
patent: 3922648 (1975-11-01), Buckley
patent: 6282216 (2001-08-01), Ikeuchi et al.
patent: 6339350 (2002-01-01), Tanaka

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