Programming, erasing, and reading structure for an NVM cell

Details Programming, erasing, and reading structure for an NVM cell Programming, erasing, and reading structure for an NVM cell

2007-03-27

2007-03-27

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S300000, C438S301000, C438S694000, C257SE21209, C257SE21634, C257SE21636

Reexamination Certificate

active

10930892

ABSTRACT:
A non-volatile memory (NVM) has a silicon germanium (SiGe) drain and a silicon carbon (SiC) source. The source being SiC provides for a stress on the channel that improves N channel mobility. The SiC also has a larger bandgap than the substrate, which is silicon. This results in it being more difficult to generate electron/hole pairs by impact ionization. Thus, it can be advantageous to use the SiC region for the drain during a read. The SiGe is used as the drain for programming and erase. The SiGe, having a smaller bandgap than the silicon substrate results in improved programming by generating electron/hole pairs by impact ionization and improved erasing by generating electron hole/pairs by band-to-band tunneling, both at lower voltage levels.

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Related application filed Aug. 24, 2004.

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