Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-03-08
2005-03-08
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S107000, C365S153000
Reexamination Certificate
active
06865117
ABSTRACT:
A circuit for programming a microelectronic device is disclosed. The circuit is configured to provide a reversible bias across the microelectronic device to perform erase and write functions. One configuration of the programming circuit includes one or more inputs coupled to the programmable device and a complimentary metal-oxide semiconductor circuit coupled to the programmable device. This design allows for writing and erasing of the programmable cell using a low and high voltage input.
REFERENCES:
patent: 5321659 (1994-06-01), Taguchi
Axon Technologies Corporation
Dinh Son T.
Snell & Wilmer L.L.P.
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