Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2008-01-29
2008-01-29
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S189090
Reexamination Certificate
active
07324400
ABSTRACT:
A PMOS transistor includes a gate, drain, and source in a substrate and is isolated from adjacent transistors in the substrate by shallow trench isolation. The transistor is programmed by applying a gate voltage to the gate and generating a drain-to-source voltage across the transistor that is of sufficient magnitude such that electrons are injected into the shallow trench isolation. This degrades the transistor so that it cannot be turned off. In one embodiment, the magnitude of the source-to-drain voltage depends on the gate voltage.
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Le Vu A.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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