Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-12
2006-09-12
Wojciechowicz, Edward (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S300000, C438S694000, C257S344000
Reexamination Certificate
active
07105395
ABSTRACT:
A non-volatile memory (NVM) has a silicon germanium (SiGe) drain that is progressively more heavily doped toward the surface of the substrate. The substrate is preferably silicon and the drain is formed by first forming a cavity in the substrate in the drain location. SiGe is epitaxially grown in the cavity with an increasing doping level. Thus, the PN junction between the substrate and the drain is lightly doped on both the P and N side. The drain progressively becomes more heavily doped until the maximum desired doping level is reached, and the remaining portion of the SiGe drain is doped at this maximum desired level. As a further enhancement, the perimeter of the SiGe in the substrate is the same conductivity type as that of the substrate and channel. Thus a portion of the channel is in the SiGe.
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Burnett James David
Chindalore Gowrishankar L.
Muralidhar Ramachandran
Swift Craig T.
Balconi-Lamica Michael
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Wojciechowicz Edward
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