Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2006-03-30
2009-06-09
Pert, Evan (Department: 2826)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C257S002000, C257S003000
Reexamination Certificate
active
07545667
ABSTRACT:
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
REFERENCES:
patent: 6448576 (2002-09-01), Davis et al.
patent: 6970034 (2005-11-01), Harris
patent: 7208751 (2007-04-01), Ooishi
patent: 7221579 (2007-05-01), Krusin-Elbaum et al.
patent: 7324365 (2008-01-01), Gruening-von Schwerin et al.
patent: 7391642 (2008-06-01), Gordon et al.
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2005/0006681 (2005-01-01), Okuno
patent: 2005/0121789 (2005-06-01), Madurawe
patent: 2005/0158950 (2005-07-01), Scheuerlein et al.
patent: 2005/0188230 (2005-08-01), Bilak
patent: 2006/0278895 (2006-12-01), Burr et al.
patent: 2006/0279978 (2006-12-01), Krusin-Elbaum et al.
patent: 2007/0096071 (2007-05-01), Kordus, II et al.
patent: 2007/0099405 (2007-05-01), Oliva et al.
patent: 2007/0295948 (2007-12-01), Lam et al.
patent: 2008/0017842 (2008-01-01), Happ et al.
patent: 2008/0048169 (2008-02-01), Doyle et al.
U.S. Appl. No. 11/958,298, filed Dec. 17, 2007.
U.S. Appl. No. 11/672,110, filed Feb. 7, 2007.
U.S. Appl. No. 11/833,321, filed Aug. 2, 2007.
U.S. Appl. No. 11/833,354, filed Aug. 3, 2007.
file://C:\DOCUME˜1\ADMINI˜1\LOCALS˜\Temp\V9K43UPW.htm, Jul. 20, 2005, “What Are CPLDs and FPGAs”, 1-3 pages.
S. Lai et al; “OUM—A 180 nm Nonvaltile Memory Cell Element Technology for Stand Alone and Embedded Applications;” IEEE, 2001, pp. 36.5.1-36.5.4.
J. Maimon et al; “Chalcogenide-Based Non-Volatile Memory Technology;” IEEE; 2001 pp. 5-2289-5-2294.
Young-Tae Kim et al.; “Study on Cell Characteristics of PRAM Using the Phase-Change Simulation;” IEEE 2003; pp. 211-214.
S. Tyson et al.; “Nonvolatile, High Density, High Performance Phase-Change Memory;” IEEE 2000; pp. 385-390.
C.J. Glassbrenner et al.; “Thermal Conductivity of Silicon and Germanium from 3° K to the Melting Point*,” Physical Review vol. 134, No. 4A; May 18, 1964; pp. A1058-A1069.
“Exploring Potential Benefits of 3D FPGA Integration”, 1-6 pages.
Jpn. J. Appl. Phys. vol. 40 (2001), Part 2, No. 6B, Jun. 15, 2001, “Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900° C”, Munenori Oizumi, Katsuhiro Aoki and Yukio Fukuda, pp. L603-L605.
Journal of Applied Physics, “Modeling of laser pulsed heating and quenching in optical data storage media”, C. A. Volkert and M. Wuttig, vol. 86, No. 4, Aug. 15, 1999, pp. 1808-1816.
J. Appl. Phys. 82 (9), Nov. 1, 1997 “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media”, Chubing Peng, Lu Cheng, and M. Mansuripur, pp. 4183-4191.
Physical Review Letters, vol. 64, No. 11, Mar. 12, 1990, “Asymmetric Crystallization and Melting Kinetics in Sodium: A Molecular-Dynamics Study”, C.J. Tymczak and John R. Ray, pp. 1278-1281.
Jpn. J. Appl. Phys. vol. 42 (2003), Part. 1, No. 2B, Feb. 2003, “Determination of the Crystallisation Kinetics of Fast-Growth Phase-Change Materials for Mark-Formation Prediction”, Erwin R. Meinders and Martijn H. R. Lankhorst, pp. 809-812.
Science, vol. 267, Mar. 31, 1995, “Formation of Glasses from Liquids and Biopolymers”, C. A. Angell, pp. 1924-1934.
Journal of Applied Physics 97, 083520 (2005), “Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview”, L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, A. E. T. Kuiper, and J. H. J. Roosen, 1-7 pages.
Elmegreen Bruce G.
Krusin-Elbaum Lia
Lam Chung Hon
Newns Dennis M.
Wordeman Matthew R.
Ahmed Selim
Alexanian Vazken
Cantor & Colburn LLP
International Business Machines - Corporation
Pert Evan
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