Programmable sub-surface aggregating metallization structure...

Details Programmable sub-surface aggregating metallization structure... Programmable sub-surface aggregating metallization structure...

2006-11-28

2006-11-28

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S182000

Reexamination Certificate

active

07142450

ABSTRACT:
A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode.

REFERENCES:
patent: 5138481 (1992-08-01), Demiryont
patent: 5315131 (1994-05-01), Kishimoto et al.

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