Programmable resistive memory with diode structure

Details Programmable resistive memory with diode structure Programmable resistive memory with diode structure

2007-10-12

2009-06-23

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Resistive

C257S002000, C257S004000, C257S005000, C257S008000, C438S102000

Reexamination Certificate

active

07551473

ABSTRACT:
Programmable resistive memory cells are accessed by semiconductor diode structures. Manufacturing methods and integrated circuits for programmable resistive elements with such diode structures are also disclosed.

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