Programmable resistive memory cell with oxide layer

Details Programmable resistive memory cell with oxide layer Programmable resistive memory cell with oxide layer

2009-02-23

2011-11-15

Dang, Phuc (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S040000, C257S415000, C438S099000, C438S104000

Reexamination Certificate

active

08058646

ABSTRACT:
Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

REFERENCES:
patent: 5761115 (1998-06-01), Kozicki
patent: 6864415 (2005-03-01), Koyanagi et al.
patent: 7118936 (2006-10-01), Kobayashi et al.
patent: 2003/0194865 (2003-10-01), Gilton
patent: 2005/0274942 (2005-12-01), Kozicki
patent: 2008/0043515 (2008-02-01), Bloch
K. Prabhakaran et al., Distinctly Different Thermal Decomposition Pathways of Ultrathin Oxide Layer on Ge and Si Surfaces, Applied Physics Letters, Apr. 17, 2000.

Affiliated with

Also associated with

Rating

Programmable resistive memory cell with oxide layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable resistive memory cell with oxide layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable resistive memory cell with oxide layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4259294