Programmable read only memory using a tungsten fuse

Details Programmable read only memory using a tungsten fuse Programmable read only memory using a tungsten fuse

1986-03-31

1987-03-03

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156653, 156657, 1566591, 29571, 29591, 148 15, 148187, H01L 21306, H01L 2100, H01L 2122

Patent

active

046473408

ABSTRACT:
An electrically programmable memory cell using selectively deposited tungsten on a sidewall to define a fuse region. Fabrication of the fuse structure involves only a single mask departure from standard MOSFET processing during which a selective isotropic etch of a silicon nitride sidewall structure facilitates the formation of a fuse structure comprised of a tungsten layer selectively deposited on exposed silicon and a source/drain diffusion separated by an oxide or selectively thinned oxide as the degenerating element. The actuation region of the fuse is proportional to the thickness of the selectively deposited tungsten layer.

REFERENCES:
patent: 4466172 (1984-08-01), Batra
patent: 4517225 (1985-05-01), Broadbent

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