Programmable read only memory operable with reduced programming

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

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Details

365185, 365189, G11C 1300

Patent

active

047617640

ABSTRACT:
A programmable read only memory having an improved writing circuit is disclosed. The writing circuit includes a first field effect transistor of a conductivity type opposite to the conductivity type of a second field effect transistor constituting a memory cell. A programming current is supplied via the first transistor to the second transistor. The first transistor represents its load characteristic having a constant current region. A programming power consumption is thereby reduced.

REFERENCES:
patent: 4103185 (1978-07-01), Denes
patent: 4228527 (1980-10-01), Gerber et al.

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